50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
-10.0V
-6.0V
-5.0V
-4.5V
VGS=-4.5V
-4.0V
VGS=-10V
-3.5V
VGS=-3.0V
0
0
1
2
3
4
5
0
5
10
15
20
-VDS [V]
-ID [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
45
40
35
30
25
20
15
10
*Note; ID=-11A
*Note ; ID=-11A
VGS=-4.5V
VGS=-10V
125
℃
25
℃
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
-VGS [V]
TJ, Junction Temperature [
℃
]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
10
1
20
* Note ; VDS=-5V
15
10
5
0.1
0.01
1E-3
1E-4
125
℃
25
℃
125
℃
25
℃
0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-VSD [V]
-VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jul 2011. Version 1.1
MagnaChip Semiconductor Ltd.
MGCHIP [ MagnaChip ]
