Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDS3652URH
-55~150oC
SOIC-8
Tape & Reel
Halogen Free
Electrical Characteristics (Ta = 25oC unless otherwise noted)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -11A
VGS = -4.5V, ID = -6A
VDS = -5V, ID = -11A
-30
-
-
-3.0
-1
V
-1.0
-1.9
-
-
-
-
-
μA
Gate Leakage Current
IGSS
-
±0.1
17
27
-
13
21
25
Drain-Source ON Resistance
RDS(ON)
gFS
mΩ
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
35
7.8
-
-
-
-
-
-
-
-
-
-
VDS = -15V, ID = -11A,
VGS = -10V
Gate-Source Charge
nC
pF
Gate-Drain Charge
6.2
Input Capacitance
1770
150
350
13.0
26.8
34.4
17.4
VDS = -15V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V ,VDS = -15V,
RL = 2.7Ω, RGEN = 3Ω
ns
Turn-Off Delay Time
td(off)
tf
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 1A, VGS = 0V
-
-
-
-0.75
27
-
-
-
V
ns
nC
IF = -11A, di/dt = 100A/μs
Qrr
12
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. Starting TJ = 25°C, L = 1mH, IAS = 11A, VDD = 15V, VGS = 10V
2
Jul 2011. Version 1.1
MagnaChip Semiconductor Ltd.
MGCHIP [ MagnaChip ]
