Nov2009.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
C
issꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
rssꢀ=ꢀCgd
Coss
10
8
※ꢀNoteꢀ:ꢀIDꢀ=ꢀ13.0A
100V
250V
C
400V
C
iss
6
4
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
2
Crss
600
400
0
200
0
0.1
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
1
10
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
14
12
10
8
102
101
100
10ꢁ1
10ꢁ2
10ꢀµs
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
6
4
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
2
0
25
50
75
100
125
150
10ꢁ1
100
101
102
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ
Temperatureꢀ
ꢀ
ꢀ
14000
12000
10000
8000
6000
4000
2000
0
singleꢀPulse
100
RthJCꢀ=ꢀ3.0℃/W
TCꢀ=ꢀ25℃
D=0.5
0.2
0.1
ꢁ1
10
0.05
0.02
0.01
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =3.0℃/W
JC
singleꢀpulse
10ꢁ3
ꢁ2
10
10ꢁ5
10ꢁ4
10ꢁ2
100
101
ꢁ1
10
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
10
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
PulseꢀWidthꢀ(s)
Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
ꢀ
ꢀ
4ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
MGCHIP [ MagnaChip ]
