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MDF13N50 参数 Datasheet PDF下载

MDF13N50图片预览
型号: MDF13N50
PDF下载: 下载PDF文件 查看货源
内容描述: [N-Channel MOSFET 500V, 13.0 A, 0.5(ohm)]
分类和应用:
文件页数/大小: 6 页 / 837 K
品牌: MGCHIP [ MagnaChip ]
 浏览型号MDF13N50的Datasheet PDF文件第1页浏览型号MDF13N50的Datasheet PDF文件第3页浏览型号MDF13N50的Datasheet PDF文件第4页浏览型号MDF13N50的Datasheet PDF文件第5页浏览型号MDF13N50的Datasheet PDF文件第6页  
Nov2009.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                              
OrderingꢀInformationꢀ  
PartꢀNumberꢀ  
Temp.ꢀRangeꢀ  
Packageꢀ  
Packingꢀ  
RoHSꢀStatusꢀ  
MDF13N50THꢀ  
ꢁ55~150oCꢀ  
TOꢁ220Fꢀ  
Tubeꢀ  
HalogenꢀFreeꢀ  
ElectricalꢀCharacteristicsꢀ(Taꢀ=25oC)ꢀ  
Characteristicsꢀ  
StaticꢀCharacteristicsꢀ  
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ  
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ  
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ  
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ  
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ  
ꢀ ꢀ ForwardꢀTransconductanceꢀ  
DynamicꢀCharacteristicsꢀ  
ꢀ ꢀ TotalꢀGateꢀChargeꢀ  
Symbolꢀ  
TestꢀConditionꢀ  
Minꢀ  
Typꢀ  
Maxꢀ  
Unitꢀ  
BVDSS  
VGS(th)  
IDSS  
IGSS  
RDS(ON)  
gfsꢀ  
ꢀ ꢀ IDꢀ=ꢀ250ꢃA,ꢀVGSꢀ=ꢀ0Vꢀ  
500ꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
5.0ꢀ  
1ꢀ  
Vꢀ  
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢃAꢀ  
ꢀ ꢀ VDSꢀ=ꢀ500V,ꢀVGSꢀ=ꢀ0Vꢀ  
ꢀ ꢀ VGSꢀ=ꢀ±30V,ꢀVDSꢀ=ꢀ0Vꢀ  
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ6.5Aꢀ  
3.0ꢀ  
ꢁꢀ  
ꢁꢀ  
ꢃAꢀ  
nAꢀ  
ꢂꢀ  
ꢁꢀ  
ꢁꢀ  
100ꢀ  
0.5ꢀ  
ꢁꢀ  
0.39ꢀ  
13ꢀ  
ꢀ ꢀ VDSꢀ=ꢀ40V,ꢀIDꢀ=ꢀ6.5Aꢀ  
ꢁꢀ  
Sꢀ  
Qgꢀ  
Qgsꢀ  
Qgdꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
33ꢀ  
10.4ꢀ  
13ꢀ  
VDSꢀ=ꢀ400V,ꢀIDꢀ=ꢀ13A,ꢀVGSꢀ=ꢀ10V(3)  
nCꢀ  
pFꢀ  
ꢀ ꢀ GateꢁSourceꢀChargeꢀ  
ꢀ ꢀ GateꢁDrainꢀChargeꢀ  
ꢀ ꢀ InputꢀCapacitanceꢀ  
Ciss  
Crss  
Coss  
td(on)  
trꢀ  
td(off)  
tfꢀ  
1390ꢀ  
6.3ꢀ  
ꢀ ꢀ VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ  
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ  
ꢀ ꢀ OutputꢀCapacitanceꢀ  
ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ  
ꢀ ꢀ RiseꢀTimeꢀ  
173ꢀ  
30.2ꢀ  
52.8ꢀ  
60.8ꢀ  
33.8ꢀ  
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ250V,ꢀIDꢀ=ꢀ13A,ꢀ  
nsꢀ  
RGꢀ=ꢀ25ꢂ(3)  
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ  
ꢀ ꢀ FallꢀTimeꢀ  
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ  
MaximumꢀContinuousꢀDrainꢀtoꢀ ꢀ  
SourceꢀDiodeꢀForwardꢀCurrentꢀ  
SourceꢁDrainꢀDiodeꢀForwardꢀ  
ISꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
ꢁꢀ  
13ꢀ  
ꢁꢀ  
Aꢀ  
Vꢀ  
VSD  
ꢀ ꢀ ISꢀ=ꢀ13A,ꢀVGSꢀ=ꢀ0Vꢀ  
1.4ꢀ  
Voltageꢀ  
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ  
Timeꢀ  
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ  
Chargeꢀ  
trrꢀ  
325ꢀ  
2.9ꢀ  
nsꢀ  
ꢃCꢀ  
ꢀ ꢀ IFꢀ=ꢀ13A,ꢀdl/dtꢀ=ꢀ100A/ꢃs(3)  
Qrrꢀ  
Noteꢀ:ꢀ  
1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRθJCꢀ&ꢀRθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ  
2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ 300us,ꢀdutyꢀcycle2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ  
3.ꢀISDꢀ 9.0A,ꢀdi/dt200A/us,ꢀV =50V,ꢀR ꢀ=25ꢂ,ꢀStartingꢀTJ=25°Cꢀ  
DD  
g
4.ꢀL=6.2mH,ꢀIAS=13.0A,ꢀVDD=50V,ꢀR ꢀ=25ꢂ,ꢀStartingꢀTJ=25°Cꢀ ꢀ  
g
2ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  
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