Nov2009.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
30
25
20
15
10
5
0.9
0.8
0.7
0.6
0.5
0.4
ꢀV =5.5V
gs
ꢀꢀꢀꢀꢀꢀ=6.0V
ꢀꢀꢀꢀꢀꢀ=6.5V
ꢀꢀꢀꢀꢀꢀ=7.0V
ꢀꢀꢀꢀꢀꢀ=8.0V
ꢀꢀꢀꢀꢀꢀ=10.0V
VGS=10.0V
VGS=20V
Notesꢀꢀ
ꢀ1.ꢀ250㎲ꢀPulseꢀTest
ꢀ2.ꢀT =25℃
C
5
10
15
20
5
10
15
20
25
30
35
V ,DrainꢁSourceꢀVoltageꢀ[V]
ID,DrainꢀCurrentꢀ[A]
DS
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
ꢀ
1.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀ=ꢀ5ꢀA
1.1
1.0
0.9
0.8
VGS=10V
VGS=4.5V
ꢁ50
0
50
100
150
200
ꢁ50
ꢁ25
0
25
50
75
100
125
150
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ
Temperatureꢀ
ꢀ
ꢀ
100
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
*ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVDS=30V
150℃
10
10
25℃
1
150℃
25℃
ꢁ55℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
VSD,ꢀSourceꢁDrainꢀVoltageꢀ[V]
4
5
6
7
8
VGSꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
ꢀ
ꢀ
3ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
MGCHIP [ MagnaChip ]
