WF1M32B-XXX3
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
Parameter
Symbol
-100
-120
-150
Unit
Min
100
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tWLEL
tELEH
tWC
tWS
tCP
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
50
0
50
0
50
0
ns
tAVEL
tAS
ns
Data Setup Time
tDVEH
tEHDX
tELAX
tDS
50
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
50
20
50
20
50
20
ns
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time
tEHEL
tCPH
ns
tWHWH1
tWHWH2
tGHEL
300
21
300
21
300
21
μs
sec
μs
sec
Read Recovery Time (2)
Chip Programming Time
0
0
0
50
50
50
NOTES:
1. Typical value for tWHWH1 is 9μs.
2. Guaranteed by design, but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
V
Input Pulse Levels
Input Rise and Fall
V
IL = 0, VIH = 2.5
IOL
5
ns
V
Current Source
Input and Output Reference Level
Output Timing Reference Level
NOTES:
1.5
1.5
V
VZ
≈ 1.5V
D.U.T.
V
I
Z is programmable from -2V to +7V.
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
Z is typically the midpoint of VOH and VOL
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
(Bipolar Supply)
Ceff = 50 pf
V
I
.
IOH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
April 2016 © 2016 Microsemi Corporation. All rights reserved.
Rev. 16
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
