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WF1M32B-100G2UM3 参数 Datasheet PDF下载

WF1M32B-100G2UM3图片预览
型号: WF1M32B-100G2UM3
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Module, 1MX32, 100ns, CQFP68, 0.140 X 0.140 INCH, 3.50 MM HEIGHT, CERAMIC, QFP-68]
分类和应用: 内存集成电路
文件页数/大小: 14 页 / 992 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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WF1M32B-XXX3  
ABSOLUTE MAXIMUM RATINGS  
CAPACITANCE  
TA = +25°C  
Parameter  
Unit  
°C  
Operating Temperature (M, Q)  
Supply Voltage Range (VCC)  
Signal Voltage Range  
-55 to +125  
-0.5 to +4.0  
-0.5 to Vcc +0.5  
-65 to +150  
+300  
Parameter  
Symbol  
Conditions  
Max Unit  
V
OE# capacitance  
COE  
CWE  
CCS  
CI/O  
CAD  
VIN = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
VI/O = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
50  
20  
20  
20  
50  
pF  
pF  
pF  
pF  
pF  
V
WE1-4# capacitance  
CS1-4# capacitance  
Data I/O capacitance  
Address input capacitance  
Storage Temperature Range  
Lead Temperature (soldering, 10 seconds)  
Endurance (write/erase cycles)  
NOTES:  
°C  
°C  
1,000,000 min.  
cycles  
This parameter is guaranteed by design but not tested.  
1. Stresses above the absolute maximum rating may cause permanent damage to the device.  
Extended operation at the maximum levels may degrade performance and affect reliability.  
RECOMMENDED OPERATING CONDITIONS  
DATA RETENTION  
Parameter  
Symbol  
VCC  
VIH  
Min  
Max  
Unit  
V
Parameter  
Test Conditions  
150°C  
Min  
10  
Unit  
Supply Voltage  
3.0  
3.6  
Years  
Years  
Minimum Pattern Data Retention  
Time  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
Operating Temp. (Ind.)  
Operating Temp. (Com.)  
0.7 x VCC VCC + 0.3  
V
125°C  
20  
VIL  
-0.5  
-55  
-40  
0
+0.8  
+125  
+85  
V
TA  
°C  
°C  
°C  
TA  
TA  
+70  
DC CHARACTERISTICS – CMOS COMPATIBLE  
Parameter  
Symbol  
ILI  
Conditions  
Min  
Max  
10  
Unit  
Input Leakage Current  
Output Leakage Current  
VCC Active Current for Read (1)  
VCC = VCC MAX, VIN = GND or VCC  
VCC = VCC MAX, VOUT = GND or VCC  
CS# = VIL, OE# = VIH, f = 5MHz  
CS# = VIL, OE# = VIH  
μA  
μA  
mA  
mA  
μA  
V
ILOx32  
ICC1  
10  
120  
140  
200  
0.45  
VCC Active Current for Program or Erase (2)  
CC Standby Current  
ICC2  
V
ICC3  
CS#, RESET# = VCC ± 0.3V  
IOL =4.0 mA, VCC = VCC MIN  
IOH = -2.0 mA, VCC = VCC MIN  
Output Low Voltage  
VOL  
Output High Voltage  
VOH1  
VLKO  
2.4  
2.3  
V
Low VCC Lock-Out Voltage (3)  
2.5  
V
NOTES:  
1. The current listed as typically less than 8 mA/MHz, with OE# at VIH  
.
2.  
ICC active while Embedded Algorithm (program or erase) is in progress.  
3. Guaranteed by design, but not tested.  
Microsemi Corporation reserves the right to change products or specications without notice.  
April 2016 © 2016 Microsemi Corporation. All rights reserved.  
Rev. 16  
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp