W78M32VP-XBX
Document Title
8Mx32 NOR Flash 3.3V Page Mode Multi-Chip Package (continued)
Revision History
Rev #
History
Release Date Status
Rev 8
Change (Pg. 1, 2, 17, 18, 19, 20, 21, 22, 23, 24, 25, 27)
September 2009
Final
8.1 Remove "/128KB sectors" from uniform sector architecture - No Byte mode
8.2 Remove "/256 byte and /16 byte" from secured silicon sector region.
8.3 Remove "under development, is not qualified or characterized and is" or
cancellation.
8.4 Remove "Pin A-1" from block diagram
8.5 Remove "Byte# = VIL" in device operations
8.6 Remove "AMax:A-1 in byte mode," from Notes in device operations
8.7 Remove all reference to "Byte Address" from pages 17 through 23
8.8 Change ILI to 10ꢀA for WP/ACC and 4ꢀA for others, ILIT = 70ꢀA,ILO = 2ꢀA,
ICC1 = 110ꢀA, IIO2 = 20ꢀA, ICC2 = 20ꢀA, ICC3 = 180ꢀA, ICC4 = 10ꢀA,
ICC5 = 1mA, ICC6 = 10ꢀA, IACC = 40mA for WP#/ACC Pin and 160mA for
VCC Pin
8.9 Add Note (1) to AC Characteristics: tOE for data polling is 45ns when VIO
1.65V to 2.7V and 32ns when VIO = 2.7V to 3.6V.
=
Rev 9
Change (Pg. 2, 3, 39)
November 2009
November 2009
Final
Final
9.1 Change DQ0-63 to DQ0-31 inf Fig. 2
9.2 Remove "/16 Bytes" in page read mode and replace "max" with 22
9.3 Remove (A2 to A-1 in byte mode)
9.4 Remove "note" in Fig. 16
Rev 10
Change (Pg. 26, 27)
10.1 Corrected Table 35
10.2 Add “tCH” to Table 37
Rev 11
Rev 12
Rev 13
Change (Pg. 2)
November 2009
January 2010
March 2010
Final
Final
Final
11.1 Corrected pinout – DQ16-31 are B3, C2-C5, D2-D5, E2-E5, and F3-F5
Change (Pg. 23)
12.1 Added capacitance measurements to table 27.
Change (Pg. 47)
13.1 Updated MO drawing thickness to 2.15 (0.079) max, length to 22.10 (0.870)
max and width to 13.10 (0.516) max
Rev 14
Rev 15
Change (Pg. 23)
February 2011
August 2011
Final
Final
14.1 Update Table 36, AC Characteristics
14.2 Combine Rev 4 items in Revision History
Changes (1, 45, 46, 47)
15.1 Add "NOR" to headline
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August 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 15
47
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