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W78M32VP-100BM 参数 Datasheet PDF下载

W78M32VP-100BM图片预览
型号: W78M32VP-100BM
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash,]
分类和应用: 内存集成电路
文件页数/大小: 47 页 / 1902 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W78M32VP-XBX  
FIGURE 7 – SECTOR ERASE OPERATION  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Write Sector Erase Cycles:  
Address 555h, Data 80h  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Sector Address, Data 30h  
Command Cycle 1  
Command Cycle 2  
Command Cycle 3  
Specify first sector for erasure  
Select  
Additional  
Sectors?  
No  
Yes  
Write Additional  
Sector Addresses  
• Each additional cycle must be written within tSEA timeout  
• The host system may monitor DQ3 or wait tSEA to ensure  
acceptance of erase commands  
• No limit on number of sectors  
Yes  
Last Sector  
Selected?  
No  
• Commands other than Erase Suspend or selecting additional  
sectors for erasure during timeout reset device to reading array  
data  
Poll DQ3.  
DQ3 = 1?  
No  
Yes  
Perform Write Operation  
Status Algorithm  
Status may be obtained by reading DQ7, DQ6 and/or DQ2.  
Yes  
Done?  
No  
No  
Error condition (Exceeded Timing Limits)  
DQ5 = 1?  
Yes  
PASS. Device returns  
to reading array.  
FAIL. Write reset command  
to return to reading array.  
Notes  
1. See table 12.1 on page 69 for earse command sequence.  
2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout.  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev. 15  
29  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
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