MX66C256
DC ELECTRICAL CHARACTERISTICS ( T
= 0o to + 70oC )
A
PARAMETER
TYP.(1)
UNITS
PARAMETER
TEST CONDITIONS
MIN.
MAX.
NAME
Guaranteed Input Low
V
IL
-0.5
0.3VCC
V
Voltage(2)
Guaranteed Input High
Voltage(2)
Input Leakage Current
V
IH
0.7VCC
VCC+0.2
1
V
IIL
Vcc = Max, VIN = 0V to Vcc
uA
Vcc = Max, CE = VIH, or OE = VIH
,
IOL
Output Leakage Current
1
uA
V
I/O = 0V to Vcc
V
V
OL
Output Low Voltage
Output High Voltage
Vcc = 5.0V, IOL = 2mA
0.4
V
V
OH
Vcc = 5.0V, IOH = -1mA
2.4
CE=VIL, IDQ=0mA, F=Fmax(3)
CE=VIL, IDQ=0mA, F=1MHZ
Vcc = 5.0V
Vcc = 5.0V
Vcc = 5.0V
Vcc = 5.0V
50
40
1
mA
mA
Operating Power Supply
Current
I
CC
Standby Power Supply
Current
Power Down Supply
Current
CE = VIH, IDQ = 0mA,
ICCSB
mA
uA
CE ³ Vcc-0.2V,
0.4
3
ICCSB1
V
IN
Vcc - 0.2V or VIN 0.2V
³
£
1. Typical characteristics are at T
A
= 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. FMAX = 1/tRC
.
DATA RETENTION CHARACTERISTICS ( T
= 0oC to + 70oC )
A
TYP.(1)
SYMBOL
PARAMETER
MIN.
MAX. UNITS
TEST CONDITIONS
CE Vcc - 0.2V,
VDR
Vcc for Data Retention
2.0
³
V
VIN Vcc - 0.2V or VIN 0.2V
³
£
Data Retention Current
CE Vcc -0.2V,
³
0.20
uA
0.01
ICCDR
tCDR
tR
VIN Vcc - 0.2V or VIN 0.2V
³
£
Chip Deselect to Data Retention Time
Operation Recovery Time
0
ns
ns
See Retention Waveform
(2)
TRC
O
1. Vcc = 2.0V, TA = + 25 C
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) (CE Controlled)
Data Retention Mode
V
DR ³ 2.0V
VCC
VCC
Vcc
CE
t
R
t
CDR
CE ³ Vcc - 0.2V
VIH
VIH
P/N DS0035
Rev. 1.1, Jan., 2000
3
Macronix America Inc. USA 1338 Ridder Park Dr., San Jose, CA 95131
Tel (408)453-8088 Fax (408)451-0876 www.macronix.com