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MX66C256TI-70 参数 Datasheet PDF下载

MX66C256TI-70图片预览
型号: MX66C256TI-70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗的32k ×8 CMOS SRAM [Very Low Power 32k x 8 CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 185 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX66C256  
PIN DESCRIPTIONS  
A0-A14 Address Input  
These 15 address input select one of the 32768 x 8-bit words  
in the RAM  
CE Chip Enable Input  
CE is active LOW . Chip enable must be active to read from  
or write to the device. If chip enable is not active, the device  
is deselected and is in a standby power mode. The DQ pins will  
be in the high impedance state when the device is deselected.  
The write enable input is active LOW and controls read and  
write operations. With the chip selected, when WE is HIGH  
and OE is LOW, output data will be present on the DQ pins;  
when WE is LOW, the data present on the DQ pins will be  
written into the selected memory location.  
WE Write Enable Input  
OE Output Enable Input  
The output enable input is active LOW. If the output enable  
is active while the chip is selected and the write enable is  
inactive, data will be present on the DQ pins and they will  
be enabled. The DQ pins will be in the high impedance  
state when OE is inactive.  
DQ0 - DQ7 Data Input/Output Ports  
These 8 bi-directional ports are used to read data from or  
write data into the RAM.  
Vcc  
Power Supply  
GND  
Ground  
TRUTH TABLE  
MODE  
Not Selected  
Output Disabled  
Read  
WE  
X
CE  
H
OE  
X
I/O Operation  
High Z  
Vcc Current  
ICCSB, ICCSB1  
H
L
H
High Z  
ICC  
ICC  
ICC  
H
L
L
DOUT  
Write  
L
L
X
DIN  
ABSOLUTE MAXIMUM RATINGS(1)  
OPERATING RANGE  
SYMBOL  
PARAMETER  
RATING  
UNITS  
V
RANGE  
AMBIEN TEMPERATURE  
Vcc  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to +7.0  
0O C to + 70O  
-40O C to + 85O  
C
4.5 ~ 5.5V  
4.5 ~ 5.5V  
COMMERCIAL  
INDUSTRIAL  
TBIAS  
TSTG  
PT  
Temperature Under Bias -40 to +125  
OC  
OC  
W
C
Storage Temperature  
Power Dissipation  
DC Output Current  
-60 to +150  
1.0  
20  
CAPACITANCE(1) (TA = 25O C, f = 1.0 MHz)  
IOUT  
mA  
SYMBOL  
CONDITIONS MAX. UNIT  
PARAMETER  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM  
RATINGS may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or  
any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute  
CIN  
Input Capacitance  
V
IN = 0V  
6
8
pF  
pF  
Input/Output  
Capacitance  
CDQ  
V
I/O = 0V  
1. This parameter is guaranteed and not tested.  
maximum rating conditions for extended periods may affect reliability.  
P/N DS0035  
Rev. 1.1, Jan., 2000  
2
Macronix America Inc. USA 1338 Ridder Park Dr., San Jose, CA 95131  
Tel (408)453-8088 Fax (408)451-0876 www.macronix.com  
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