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MX29LV400BXBI-70 参数 Datasheet PDF下载

MX29LV400BXBI-70图片预览
型号: MX29LV400BXBI-70
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ 512K ×8 / 256K ×16 ]的CMOS单电压3V仅限于Flash存储器 [4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 59 页 / 1217 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV400T/B  
AUTOMATIC CHIP ERASE TIMING WAVEFORM  
All data in chip are erased. External erase verification is  
not required because data is verified automatically by  
internal control circuit. Erasure completion can be veri-  
fied by DATA polling and toggle bit checking after auto-  
matic erase starts. Device outputs 0 during erasure  
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle  
bit, DATA polling, timing waveform)  
Figure 8. AUTOMATIC CHIP ERASE TIMING WAVEFORM  
Erase Command Sequence(last two cycle)  
Read Status Data  
VA  
tWC  
tAS  
VA  
2AAh  
555h  
Address  
tAH  
CE  
tCH  
tGHWL  
OE  
tWHWH2  
tWP  
WE  
tCS  
tWPH  
tDS tDH  
In  
Progress  
55h  
10h  
Complete  
Data  
tBUSY  
tRB  
RY/BY  
tVCS  
VCC  
NOTES:  
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").  
P/N:PM0710  
REV. 1.4, NOV. 23, 2001  
29  
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