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MX29LV160CBTC-70G 参数 Datasheet PDF下载

MX29LV160CBTC-70G图片预览
型号: MX29LV160CBTC-70G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ 2Mx8 / 1Mx16 ] CMOS单电压3V仅限于Flash存储器 [16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管ISM频段
文件页数/大小: 66 页 / 923 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV160C T/B  
AC CHARACTERISTICSTA = -40oC to 85oC,VCC = 2.7V~3.6V  
Table 10. READ OPERATIONS  
29LV160C-55R 29LV160C-70  
29LV160C-90  
SYMBOL PARAMETER  
MIN.  
MAX. MIN.  
MAX.  
MIN. MAX. UNIT CONDITIONS  
tRC  
tACC  
tCE  
Read Cycle Time (Note 1)  
Address to Output Delay  
CE# to Output Delay  
55  
70  
90  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
55  
55  
30  
70  
70  
30  
25  
90  
90  
30  
25  
CE#=OE#=VIL  
OE#=VIL  
tOE  
OE# to Output Delay  
CE#=VIL  
tDF  
OE# High to Output Float (Note 2)  
Output Enable Read  
0
25  
0
0
CE#=VIL  
tOEH  
0
0
0
Hold Time  
Toggle and  
10  
10  
10  
Data# Polling  
tOH  
Address to Output hold  
0
0
0
ns  
CE#=OE#=VIL  
NOTES:  
TEST CONDITIONS:  
1. Not 100% tested.  
Input pulse levels: 0V/3.0V.  
2. tDF is defined as the time at which the output achieves  
the open circuit condition and data is no longer driven.  
Input rise and fall times is equal to or less than 5ns.  
Outputload:1TTL gate+100pF(Includingscopeand  
jig)for29LV160CT/B-90,1TTL gate+30pF(Including  
scope and jig) for 29LV160C T/B-70.  
Reference levels for measuring timing: 1.5V.  
P/N:PM1186  
REV. 1.2, JAN. 19, 2006  
23  
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