MX29LV160C T/B
AC CHARACTERISTICSTA = -40oC to 85oC,VCC = 2.7V~3.6V
Table 11. Erase/Program Operations
29LV160C-55R
29LV160C-70
29LV160C-90
SYMBOL PARAMETER
MIN.
55
0
MAX.
MIN.
70
0
MAX.
MIN.
90
0
MAX. UNIT
tWC
tAS
tAH
tDS
tDH
tOES
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
ns
ns
ns
ns
ns
ns
ns
45
35
0
45
35
0
45
45
0
Data Hold Time
Output Enable Setup Time
0
0
0
tGHWL Read Recovery Time Before Write
(OE# High to WE# Low)
0
0
0
tCS
CE# Setup Time
CE# Hold Time
0
0
0
ns
ns
ns
ns
us
tCH
0
0
0
tWP
tWPH
Write Pulse Width
Write Pulse Width High
35
35
35
30
30
30
tWHWH1 ProgrammingOperation(Note2)
(Byte/Wordprogramtime)
9/11(typ.)
9/11(typ.)
9/11(typ.)
tWHWH2 Sector Erase Operation (Note 2)
0.7(typ.)
0.7(typ.)
0.7(typ.)
sec
us
ns
ns
ns
ns
tVCS
tRB
VCC Setup Time (Note 1)
50
0
50
0
50
0
Recovery Time from RY/BY#
Sector Erase Valid to RY/BY# Delay
Chip Erase Valid to RY/BY# Delay
Program Valid to RY/BY# Delay
tBUSY
90
90
90
90
90
90
90
90
90
tWPP1 Write pulse width for sector
protect (A9, OE# Control)
100ns
100ns
10us
(typ.)
12ms
(typ.)
100ns
100ns
10us
(typ.)
12ms
(typ.)
100ns 10us
(typ.)
tWPP2 Write pulse width for sector
unprotect (A9, OE# Control)
100ns 12ms
(typ.)
tVLHT
Voltage transition time
4
4
4
4
4
4
us
us
tOESP OE# setup time to WE# active
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
P/N:PM1186
REV. 1.2, JAN. 19, 2006
26
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