MX29LV040C
4M-BIT[512Kx8]CMOSSINGLEVOLTAGE
3VONLYEQUALSECTORFLASHMEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8 only
then resumes the erase
• Status Reply
• Singlepowersupplyoperation
- Data# Polling & Toggle bit for detection of program
anderaseoperationcompletion
- 3.0V only operation for read, erase and program
operation
• Sectorprotection
• Fully compatible with MX29LV040 device
• Fast access time: 55R/70/90ns
• Lowpowerconsumption
- Hardware method to disable any combination of
sectors from program or erase operations
-Anycombinationofsectorscanbeerasedwitherase
- 30mA maximum active current
suspend/resumefunction
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
- 0.2uA typical standby current
• Commandregisterarchitecture
- 8 equal sector of 64K-Byte each
- Byte Programming (9us typical)
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- Sector Erase (Sector structure 64K-Byte x8)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability
-32-pinPLCC
- 32-pin TSOP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
- Automatically program and verify data at specified
address
• Erasesuspend/EraseResume
- Suspends sector erase operation to read data from,
orprogramdatato,any sectorthatisnotbeingerased,
• 20 years data retention
GENERAL DESCRIPTION
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
The MX29LV040C is a 4-mega bit Flash memory orga-
nized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV040C is
packaged in 32-pin PLCC and TSOP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV040C uses a 2.7V~3.6VVCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The standard MX29LV040C offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV040C has separate chip enable (CE#) and
output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV040C uses a command register to manage this
functionality. The command register allows for 100%
P/N:PM1149
REV. 1.3, APR. 24, 2006
1
Macronix [ MACRONIX INTERNATIONAL ]
