79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
1, 2
TABLE 9. 79C0408 MODE SELECTION
CE 3
PARAMETER
OE
WE
I/O
RES
RDY/BUSY
Read
V
V
V
DOUT
V
High-Z
High-Z
IL
IL
IH
H
Standby
Write
V
X
X
High-Z
X
IH
V
V
V
D
V
High-Z --> V
IL
IH
IL
IN
H
OL
Deselect
Write Inhibit
V
V
V
High-Z
V
High-Z
IL
IH
IH
H
X
X
X
V
--
--
X
X
--
--
IH
V
X
IL
Data Polling
Program
V
V
V
Data Out (I/O7)
High-Z
V
V
IL
IL
IH
H
OL
X
X
X
V
High-Z
IL
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
3. For CE1-4 only one CE can be used (“on”) at a time.
FIGURE 1. READ TIMING WAVEFORM
10.13.04 Rev 15
All data sheets are subject to change without notice
7
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