79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(V = 5V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNIT
MIN
Output Enable to Write Setup Time
tOES
9, 10, 11
ns
-120
-150
-200
0
0
0
--
--
--
Output Enable Hold Time
tOEH
tWC
tDL
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ms
ns
-120
-150
-200
0
0
0
--
--
--
Write Cycle Time2
-120
-150
-200
--
--
--
10
10
10
Data Latch Time
-120
-150
-200
250
300
400
--
--
--
Byte Load Window
tBL
µs
µs
ns
-120
-150
-200
100
100
200
--
--
--
Byte Load Cycle
tBLC
-120
-150
-200
0.55
0.55
0.95
30
30
30
Time to Device Busy
tDB
-120
-150
-200
100
120
170
--
--
--
Write Start Time3
tDW
ns
-120
-150
-200
150
150
250
--
--
--
RES to Write Setup Time
tRP
µs
µs
-120
-150
-200
100
100
200
--
--
--
V to RES Setup Time4
tRES
CC
-120
-150
-200
1
1
3
--
--
--
1. Use this divice in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
10.13.04 Rev 15
All data sheets are subject to change without notice
6
©2004 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
