79C0408
4 Megabit (512k x 8-bit) EEPROM MCM
1. ILI on RES = 100 uA max.
2. Only one CE\ Active.
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TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS
(V = 5V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time CE = OE = V , WE = V
tACC
9, 10, 11
ns
IL
IH
-120
-150
-200
--
--
--
120
150
200
Chip Enable Access Time OE = V , WE = V
tCE
tOE
tOH
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
IL
IH
-120
-150
-200
--
--
--
120
150
200
Output Enable Access Time CE = V , WE = V
IL
IH
-120
-150
-200
0
0
0
75
75
125
Output Hold to Address Change CE = OE = V , WE = V
IL
IH
-120
-150
-200
0
0
0
--
--
--
2
Output Disable to High-Z
CE = V , WE = V
tDF
9, 10, 11
ns
IL
IH
-120
-150
-200
0
0
0
50
50
60
CE = OE = V , WE = V
tDFR
9, 10, 11
9, 10, 11
IL
IH
-120
-150
-200
0
0
0
300
350
450
3
RES to Output Delay CE = OE = V , WE = V
tRR
ns
IL
IH
-120
-150
-200
--
--
--
400
450
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
10.13.04 Rev 15
All data sheets are subject to change without notice
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©2004 Maxwell Technologies
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