P re c is io n , 1 6 -Ch a n n e l/Du a l 8 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
6/MAX397
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)
(V+ = +5V ±10%, V- = -5V ±10%, GND = 0V, V = V
= 2.4V, V = V
= 0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
UNITS
DIGITAL LOGIC INPUT
Logic High Input Voltage
Logic Low Input Voltage
V
, V
2.4
V
V
AH ENH
V
, V
AL ENL
0.8
0.1
Input Current with
Input Voltage High
I
, I
V
= V = 2.4V
-0.1
-0.1
µA
µA
AH ENH
A
EN
Input Current with
Input Voltage Low
I
, I
AL ENL
V
A
= V = 0.8V
0.1
EN
SUPPLY
Power-Supply Range
±3
-1
±8
1
V
V
= V = 0V/V+,
A
EN
Positive Supply Current
Negative Supply Current
Ground Current
I+
I-
T
= +25°C
µA
µA
µA
A
V+ = 5.5V, V- = -5.5V
V
EN
= V = 0V/V+, V+ = 5.5V, V- = -5.5V
-1
-1
-1
1
1
1
A
T
A
= +25°C
V
= V = 0V/V+,
A
EN
I
GND
V+ = 5.5V, V- = -5.5V
T
A
= T to T
MIN MAX
DYNAMIC
T
= +25°C
95
150
250
A
Transition Time
t
Figure 2
Figure 4
Figure 3
ns
ns
ns
TRANS
T
A
= T to T
MIN MAX
Break-Before-Make Interval
Enable Turn-On Time
t
T
A
= +25°C
= +25°C
5
70
OPEN
T
A
100
150
250
150
200
5
t
ON(EN)
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
55
Enable Turn-Off Time
t
Figure 3
ns
OFF(EN)
T
A
= T
to T
MIN
Charge Injection (Note 3)
Off-Isolation (Note 7)
V
CTE
C
= 100pF, V = 0V, Figure 5 T = +25°C
2
pC
dB
L
NO
A
V
ISO
V
EN
= 0V, R = 1kΩ, f = 100kHz
T
= +25°C
= +25°C
A
-75
L
A
V
EN
= 2.4V, f = 100kHz,
Crosstalk Between Channels
V
CT
T
-92
dB
V
NO
= 1V , R = 1kΩ, Figure 7
p-p L
Logic Input Capacitance
NO Off-Capacitance
C
f = 1MHz
f = 1MHz, V = V
T
= +25°C
T = +25°C
A
8
pF
pF
IN
A
C
= 0V
11
80
40
90
68
NO(OFF)
EN
COM
MAX396
MAX397
MAX396
MAX397
f = 1MHz,
= V
COM Off-Capacitance
COM On-Capacitance
C
T
A
= +25°C
= +25°C
pF
pF
COM(OFF)
V
EN
= 0V
COM
f = 1MHz,
= V
C
T
A
COM(ON)
V
EN
= 0V
COM
_______________________________________________________________________________________
3
MAXIM [ MAXIM INTEGRATED PRODUCTS ]
