MCP795WXX/MCP795BXX
10.1.2
READ SEQUENCE
10.0 ON-BOARD MEMORY
The part is selected by pulling CS low. The 8-bit READ
instruction is transmitted to the MCP795W20 followed
by the 8-bit address (A7 through A0). After the correct
READinstruction and address are sent, the data stored
in the memory at the selected address is shifted out on
the SO pin. The data stored in the memory at the next
address can be read sequentially by continuing to pro-
vide clock pulses. The internal Address Pointer is auto-
matically incremented to the next higher address after
each byte of data is shifted out.
The MCP795XXX has both on-board EEPROM mem-
ory and battery-backed SRAM. The SRAM is arranged
as 64 x 8 bytes and is retained when VCC supply is
removed. The EEPROM is organized as 256/128 x 8
bytes. The EEPROM is nonvolatile and does not
require VBAT supply for retention.
10.1 SRAM
The SRAM array is a battery-backed-up array of 64
bytes. The SRAM is accessed using the Read and
Write commands, starting at address 0x20h.
As the RTCC registers are separate from the SRAM
array, when reading the RTCC registers set the
address will wrap back to the start of the RTCC regis-
ters. Also when an address within the SRAM array is
loaded the internal Address Pointer will wrap back to
the start of the SRAM array. The READinstruction can
be used to read the registers and array indefinitely by
continuing to clock the device. The read operation is
terminated by raising the CS pin (Figure 10-1).
Upon power-up the SRAM locations are in an unde-
fined state but can be set to a known value using the
CLRRAMinstruction (Figure 9-8).
10.1.1
SRAM/RTCC OPERATION
The MCP795XXX contains a Real-Time Clock and Cal-
endar. The RTCC registers and SRAM array are
accessed using the same commands. The RTCC reg-
isters and SRAM array are powered internally from the
switched supply that is either connected to VCC or VBAT
supply. No external read/write operations are permitted
when the device is running from the VBAT supply.
10.1.3
WRITE SEQUENCE
As the RTCC registers and SRAM array do not require
the WREN sequence like the nonvolatile memory, the
user may proceed by setting the CS low, issuing the
WRITE instruction, followed by the address, and then
the data to be written. As no write cycle is required for
the RTCC registers and SRAM array the entire con-
tents can be written in a single command.
Table 1-2 contains a list of the possible instruction
bytes and format for device operation.
For the last data byte to be written to the RTCC regis-
ters and SRAM array, the CS must be brought high
after the last byte has been clocked in. If CS is brought
high at any other time, the last byte will not be written.
Refer to Figure 10-2 for more detailed illustrations on
the write sequence.
FIGURE 10-1:
READ SEQUENCE
CS
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Address Byte
Instruction
0
0
0
1
0
0
1
1
A7
6
5
4
3
2
1
A0
Don’t Care
Data Out
SI
High-Impedance
7
6
5
4
3
2
1
0
SO
The address will rollover to the start of either the RTCC registers or SRAM array.
DS22280A-page 38
Preliminary
2011 Microchip Technology Inc.
MAS [ MICRO ANALOG SYSTEMS ]
