®
LY61L51216A
512K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.3
TRUTH TABLE
I/O OPERATION
MODE
CE# OE# WE# LB# UB#
SUPPLY CURRENT
DQ0-DQ7
DQ8-DQ15
Standby
H
X
X
X
X
High – Z
High – Z
ISB1
ICC
L
L
H
X
H
X
X
H
X
H
High – Z
High – Z
High – Z
High – Z
Output Disable
L
L
L
L
L
L
L
L
L
X
X
X
H
H
H
L
L
L
L
H
L
L
H
L
H
L
L
H
L
L
DOUT
High – Z
DOUT
DIN
High – Z
DIN
High – Z
DOUT
DOUT
High – Z
DIN
Read
Write
ICC
ICC
DIN
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN. TYP. *4
MAX.
3.6
3.6
VCC+0.3
0.8
UNIT
PARAMETER
-8
-10/12
3.0
2.7
2.2
3.3
3.3
-
V
V
V
V
Supply Voltage
VCC
*1
Input High Voltage
Input Low Voltage
Input Leakage
Current
VIH
VIL
*2
- 0.3
-
ILI
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS, Output Disabled
- 1
- 1
-
-
1
1
A
µ
Output Leakage
Current
ILO
V
A
µ
Output High Voltage
VOH
VOL
IOH = -4mA
IOL =8mA
2.4
-
-
-
-
V
Output Low Voltage
0.4
V
-8
110
100
90
140
130
120
120
110
100
-
-
-
-
-
-
mA
mA
mA
mA
mA
mA
CE# = VIL , II/O = 0mA
;f=max
Icc
-10
-12
-8
Average Operating
Power supply Current
90
≦
CE# 0.2, Other pin is at
0.2V or Vcc-0.2V
-10
Icc1
80
II/O = 0mA;f=max
-12
70
Standby Power
Supply Current
Standby Power
Supply Current
Isb
CE# ≧Vih ,Other pin is at Vil or Vih
-
-
-
40
25
mA
mA
CE# ≧VCC - 0.2V;
Other pin is at 0.2V or Vcc-0.2V
ISB1
3
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25℃
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
3
LYONTEK [ Lyontek Inc. ]
