®
LY61L51216A
512K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
Rev. 1.3
FEATURES
Fast access time : 8/10/12ns
low power consumption:
Operating current:
The LY61L51216A is a 8M-bit high speed CMOS
static random access memory organized as 512K
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
90/80/70mA (TYP. 8/10/12ns)
Standby current:
3mA(TYP)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
The LY61L51216A operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mmx8mm TFBGA
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY61L51216A
LY61L51216A(I)
LY61L51216A
LY61L51216A(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
0 ~ 70℃
Vcc Range
Standby(ISB1,TYP.) Operating(Icc1,TYP.)
3.0 ~ 3.6V
3.0 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
8/10/12ns
8/10/12ns
10/12ns
3mA
3mA
3mA
3mA
90/80/70mA
90/80/70mA
80/70mA
-40 ~ 85℃
10/12ns
80/70mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
A0 - A18
DQ0 – DQ15 Data Inputs/Outputs
CE#
WE#
OE#
LB#
UB#
VCC
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
VSS
Ground
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
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