®
LY61L1024
128K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 2.7
FEATURES
GENERAL DESCRIPTION
The LY61L1024 is a 1,048,576-bit low power CMOS
static random access memory organized as 131,072
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 10/12/15/18ns
Low power consumption:
Operating current : 75/70/65/55mA (TYP.)
Standby current : 0.6mA (TYP.)
1μA (TYP.) LL -version
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY61L1024 is well designed for very high speed
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 300 mil SOJ
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
The LY61L1024 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY61L1024
Operating
Temperature
0 ~ 70℃
Vcc Range
Standby(ISB1,TYP.)
0.6mA
Operating(Icc,TYP.)
75mA
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
10ns
12/15ns
10ns
0 ~ 70℃
-40 ~ 85℃
-40 ~ 85℃
0 ~ 70℃
LY61L1024
0.6mA
70/65mA
75mA
LY61L1024(I)
LY61L1024(I)
LY61L1024(LL)
LY61L1024(LLI)
0.6mA
12/15ns
18ns
0.6mA
70/65mA
55mA
1µA
-40 ~ 85℃
18ns
1µA
55mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1