®
LY612568
5V 256K X 8 BIT HIGH SPEED CMOS SRAM
Preliminary 0.2
TRUTH TABLE
CE#
H
OE#
X
WE#
X
SUPPLY CURRENT
MODE
I/O OPERATION
High-Z
Standby
ISB1
ICC
ICC
ICC
Output Disable
Read
L
H
H
High-Z
L
L
H
DOUT
Write
L
X
L
DIN
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
4.5
2.2
- 0.3
- 1
TYP. *4
5.0
MAX.
5.5
VCC+0.3
0.8
UNIT
PARAMETER
Supply Voltage
VCC
V
V
V
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
VIL
-
-
-
*2
ILI
V
V
CC ≧ VIN ≧ VSS
CC ≧ VOUT ≧ VSS,
Output Disabled
1
A
µ
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -4mA
VOL IOL = 8mA
Cycle time = Min.
2.4
-
-
-
V
V
mA
mA
mA
-
-
-
-
0.4
140
110
100
100
80
75
-15
-20
-25
Average Operating
Power supply Current
ICC
CE# = VIL , II/O = 0mA
Other pins at VIH or VIL
Standby Power
Supply Current
Notes:
CE# ≧VCC - 0.2V
Other pins at 0.2V or VCC-0.2V
ISB1
-
0.1
3*5
mA
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25
5. 1mA for special request
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
MIN.
-
-
MAX
8
10
UNIT
pF
pF
CIN
CI/O
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
LYONTEK [ Lyontek Inc. ]
