®
LY612568
5V 256K X 8 BIT HIGH SPEED CMOS SRAM
Preliminary 0.2
FEATURES
GENERAL DESCRIPTION
The LY612568 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 15/20/25ns
Low power consumption:
Operating current: 100/80/75mA (TYP.)
Standby current: 100 A (TYP.)
µ
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY612568 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
The LY612568 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
PRODUCT FAMILY
Product
Family
Operating
Temperature
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
Vcc Range
Speed
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
LY612568
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
15/20/25ns
15/20/25ns
15/20/25ns
100µA
100µA
100µA
100/80/75mA
100/80/75mA
100/80/75mA
LY612568(E)
LY612568(I)
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
A0 - A17
Vcc
Vss
DQ0 – DQ7 Data Inputs/Outputs
CE#
WE#
OE#
VCC
VSS
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
256Kx8
MEMORY ARRAY
A0-A17
DECODER
Ground
NC
No Connection
I/O DATA
CIRCUIT
DQ0-DQ7
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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