LTC1154
High-Side Micropower
MOSFET Driver
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DESCRIPTIO
EATURE
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F
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Fully Enhances N-Channel Power MOSFETs
8µA IQ Standby Current
TheLTC1154singlehigh-sidegatedriverallowsusinglow
cost N-channel FETs for high-side switching applications.
An internal charge pump boosts the gate drive voltage
above the positive rail, fully enhancing an N-channel MOS
switch with no external components. Micropower opera-
tion, with 8µA standby current and 85µA operating cur-
rent, allows use in virtually all systems with maximum
efficiency.
85µA IQ ON Current
No External Charge Pump Capacitors
4.5V to 18V Supply Range
Short-Circuit Protection
Thermal Shutdown via PTC Thermistor
Status Output Indicates Shutdown
Available in 8-Pin SOIC
Included on chip is programmable over-current sensing.
A time delay can be added to prevent false triggering on
high in-rush current loads. An active high shutdown input
is also provided and interfaces directly to a standard PTC
thermistor for thermal shutdown. An open-drain output is
provided to report switch status to the µP. An active low
enable input is provided to control multiple switches in
banks.
O U
PPLICATI
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Laptop Computer Power Switching
SCSI Termination Power Switching
Cellular Telephone Power Management
Battery Charging and Management
High-Side Industrial and Automotive Switching
Stepper Motor and DC Motor Control
The LTC1154 is available in both 8-pin DIP and 8-pin SOIC
packages.
U
O
TYPICAL APPLICATI
Ultra-Low Voltage Drop High-Side Switch
with Short-Circuit Protection
Standby Supply Current
50
5V
V
J
= 0V
IN
51k
45
40
35
30
25
20
15
10
5
0.036Ω*
0.1µF**
2.7A MAX
T
= 25°C
IN
V
S
200k**
µP
EN
DS
G
LTC1154
STATUS
IRLR024
GND
SD
5V
LOAD
LTC1154 • TA01
0
ALL COMPONENTS SHOWN ARE SURFACE MOUNT.
* IMS026 INTERNATIONAL MANUFACTURING SERVICE, INC. (401) 683-9700
** NOT REQUIRED IF LOAD IS RESISTIVE OR INDUCTIVE.
0
5
10
15
20
SUPPLY VOLTAGE (V)
LTC1153 • TA02
1
Linear [ Linear ]
