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LTC1154CS8 参数 Datasheet PDF下载

LTC1154CS8图片预览
型号: LTC1154CS8
PDF下载: 下载PDF文件 查看货源
内容描述: 高端微MOSFET驱动器 [High-Side Micropower MOSFET Driver]
分类和应用: 驱动器接口集成电路光电二极管
文件页数/大小: 16 页 / 334 K
品牌: Linear [ Linear ]
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LTC1154  
O U  
W
U
PPLICATI  
A
S I FOR ATIO  
Capacitive Loads  
Lamp Loads  
Large capacitive loads, such as complex electrical sys-  
tems with large bypass capacitors, should be powered  
using the circuit shown in Figure 3. The gate drive to the  
power MOSFET is passed through an RC delay network,  
R1 and C1, which greatly reduces the turn-on ramp rate of  
the switch. And since the MOSFET source voltage follows  
the gate voltage, the load is powered smoothly and slowly  
from ground. This dramatically reduces the start-up cur-  
rent flowing into the supply capacitor(s) which, in turn,  
reducessupplytransientsandallowsforsloweractivation  
of sensitive electrical loads. (Diode, D1, provides a direct  
path for the LTC1154 protection circuitry to quickly dis-  
charge the gate in the event of an over-current condition).  
The in-rush current created by a lamp during turn-on can  
be 10 to 20 times greater than the rated operating current.  
The circuit shown in Figure 4 shifts the current limit  
threshold up by a factor of 11:1 (to 30A) for 100ms when  
the bulb is first turned on. The current limit then drops  
down to 2.7A after the in-rush current has subsided.  
12V  
+
470µF  
10k  
0.036Ω  
IN  
V
S
100k  
EN  
DS  
G
VN2222LL  
0.1µF  
LTC1154  
STATUS  
GND  
1M  
SD  
MTP3055EL  
12V  
+
9.1V  
470µF  
IN  
V
S
0.036Ω  
C
R
12V/1A  
BULB  
D
D
0.01µF  
100k  
EN  
DS  
G
D1  
1N4148  
LTC1154  
LTC1154 • F04  
STATUS  
GND  
R
100k  
R
2
Figure 4. Lamp Driver with Delayed Protection  
1
100k  
MTP3055E  
OUT  
SD  
C
1
Selecting RD and CD  
0.33µF  
15V  
Figure 5 is a graph of normalized over-current shutdown  
time versus normalized MOSFET current. This graph is  
used to select the two delay components, RD and CD,  
which make up a simple RC delay between the drain sense  
resistor and the drain sense input.  
+
C
LOAD  
100µF  
LTC1154 • F03  
Figure 3. Powering Large Capacitive Loads  
The RC network, RD and CD, in series with the drain sense  
input should be set to trip based on the expected charac-  
teristics of the load after start-up. With this circuit, it is  
possible to power a large capacitive load and still react  
quickly to an over-current condition. The ramp rate at the  
output of the switch as it lifts off ground is approximately:  
10  
1
dV/dt = (VGATE – VTH)/(R1 × C1)  
0.1  
0.01  
Andthereforethecurrentflowingintothecapacitorduring  
start-up is approximately:  
1
10  
100  
ISTART-UP = CLOAD × dV/dt  
MOSFET CURRENT (1 = SET CURRENT)  
LTC1154 • F05  
Using the values shown in Figure 3, the start-up current is  
less than 100mA and does not false-trigger the drain  
sense circuitry which is set at 2.7A with a 1ms delay.  
Figure 5. Over-Current Shutdown Time vs MOSFET Current  
9