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C3216X5R0J226MT 参数 Datasheet PDF下载

C3216X5R0J226MT图片预览
型号: C3216X5R0J226MT
PDF下载: 下载PDF文件 查看货源
内容描述: 38V , 10A DC / DC稳压器μModule高级输入和负载保护 [38V, 10A DC/DC μModule Regulator with Advanced Input and Load Protection]
分类和应用: 稳压器电容器
文件页数/大小: 64 页 / 822 K
品牌: Linear [ Linear ]
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LTM4641  
APPLICATIONS INFORMATION—EMI PERFORMANCE  
OVPGM to SGND. Furthermore, the OV  
trip voltage  
whereV  
isthemaximuminputvoltagethattheinput  
PGM  
INH(MAX)  
can be made more accurate than its default setting by  
paralleling the existing (internal) OV resistor-divider  
to the power stage (V ) will see in the application, and  
INH  
f
is the DC/DC converter’s full load switching frequency  
PGM  
SW  
with an external resistor divider comprised of low T.C.R.  
0.1%-tolerance resistors, for example. See Appendix F  
for details on how to adjust or tighten the fast OOV  
comparator trip threshold.  
of operation. C should be NPO, C0G or X7R-type (or  
SW  
better) material.  
The snubber resistor (R ) value is then given by:  
SW  
5nH  
CSW  
RSW  
=
The Switching Node: SW Pin  
(31)  
The SW pin provides access to the midpoint of the power  
MOSFETs in LTM4641’s power stage.  
The snubber resistor should be low ESL and capable of  
withstanding the pulsed currents present in snubber cir-  
cuits. A value between 0.7Ω and 4.2Ω is normal.  
Connecting an optional series RC network from SW to  
GND can dampen high frequency (~30MHz+) switch node  
ringing caused by parasitic inductances and capacitances  
in the switched-current paths. The RC network is called  
a snubber circuit because it dampens (or “snubs”) the  
resonance of the parasitics, at the expense of higher  
power loss.  
EMIperformanceofLTM4641(onDC1543)withandwith-  
out a snubber is compared and contrasted in Figures 13 to  
16. In the examples shown, the snubber networks reduce  
EMI signal amplitude by as much as ~5dB.  
Access to SW is also provided to make it possible to  
deliberately induce a short circuit between the input of  
To use a snubber, choose first how much power to allocate  
to the task and how much PCB real estate is available to  
implement the snubber. For example, if PCB space al-  
lows a low inductance 1W resistor to be used—derated  
LTM4641’s power stage (V ) and its switch node—to  
INH  
evaluate, in hardware, the performance of the LTM4641  
when a high side MOSFET fault condition is simulated.  
conservatively to 600mW (P  
)—then the capacitor in  
SNUB  
the snubber network (C ) is computed by:  
SW  
70  
60  
50  
PSNUB  
CSW  
=
(30)  
2
V
fSW  
INH(MAX)  
EN55022  
40  
CLASS B  
70  
LIMIT  
30  
60  
50  
40  
30  
20  
10  
0
20  
10  
EN55022  
CLASS B  
LIMIT  
0
–10  
30  
814.8  
1010  
226.2  
422.4  
618.6  
FREQUENCY (MHz)  
4641 F13  
Figure 14. Radiated Eꢃissions Scan of LTꢁ4641 Producing  
5VOUT at 10A, froꢃ 12VIN. DC1543 Hardware with Ad Hoc  
Snubber Network Installed Directly Between SW Probe Point  
and GND, CSW = 10nF, RSW = 1Ω (1W-Rated). fSW = 550kHz.  
CIN(BULK) = 2 × 100μF, CIN(ꢁLCC) = 4 × 10μF X7R + 2 × 4.7μF  
X7R. ꢁeasured in a 10 ꢁeter Chaꢃber. Quasi-Peak Detect  
ꢁethod  
–10  
30  
618.6  
FREQUENCY (MHz)  
814.8  
1010  
226.2  
422.4  
4641 F13  
Figure 13. Radiated Eꢃissions Scan of LTꢁ4641 Producing  
5VOUT at 10A, froꢃ 12VIN. DC1543 Hardware with No Snubber  
Network Installed. fSW = 550kHz. CIN(BULK) = 2 × 100μF,  
CIN(ꢁLCC) = 4 × 10μF X7R + 2 × 4.7μF X7R. ꢁeasured in a  
10 ꢁeter Chaꢃber. Quasi-Peak Detect ꢁethod  
4641f  
35