Specifications ispGDX Family
1
Absolute Maximum Ratings
Supply Voltage V ................................. -0.5 to +7.0V
cc
Input Voltage Applied........................ -2.5 to V +1.0V
CC
Off-State Output Voltage Applied ..... -2.5 to V +1.0V
CC
Storage Temperature................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T ) with Power Applied ... 150°C
J
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
SYMBOL
PARAMETER
MIN.
4.75
0
MAX.
5.25
UNITS
Supply Voltage
Commercial TA = 0°C to +70°C
V
V
V
VCC
VIL1
VIH1
Input Low Voltage
Input High Voltage
0.8
Vcc + 1
2.0
1. Typical 100mV of input hysteresis.
Capacitance (TA=25oC, f=1.0 MHz)
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
VCC = 5.0V, V = 2.0V
I/O Capacitance
Dedicated Clock Capacitance
8
pf
pf
C1
C2
I/O
10
VCC= 5.0V, VY= 2.0V
Table 2 - 0006
Erase/Reprogram Specifications
PARAMETER
MINIMUM
10,000
MAXIMUM
UNITS
ispGDX Erase/Reprogram Cycles
–
Cycles
6
LATTICE [ LATTICE SEMICONDUCTOR ]
