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GAL18V10-20LP 参数 Datasheet PDF下载

GAL18V10-20LP图片预览
型号: GAL18V10-20LP
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能E2CMOS PLD通用阵列逻辑 [High Performance E2CMOS PLD Generic Array Logic]
分类和应用:
文件页数/大小: 16 页 / 267 K
品牌: LATTICE [ LATTICE SEMICONDUCTOR ]
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Specifications GAL18V10  
Electronic Signature  
Output Register Preload  
An electronic signature is provided in every GAL18V10 device. It When testing state machine designs, all possible states and state  
contains 64 bits of reprogrammable memory that can contain user- transitions must be verified in the design, not just those required  
defined data. Some uses include user ID codes, revision numbers, in the normal machine operations. This is because certain events  
or inventory control. The signature data is always available to the may occur during system operation that throw the logic into an  
user independent of the state of the security cell.  
illegal state (power-up, line voltage glitches, brown-outs, etc.). To  
test a design for proper treatment of these conditions, a way must  
be provided to break the feedback paths, and force any desired (i.e.,  
illegal) state into the registers. Then the machine can be sequenced  
and the outputs tested for correct next state conditions.  
Security Cell  
A security cell is provided in every GAL18V10 device to prevent  
unauthorized copying of the array patterns. Once programmed,  
this cell prevents further read access to the functional bits in the  
device. This cell can only be erased by re-programming the de-  
vice, so the original configuration can never be examined once this  
cell is programmed. The Electronic Signature is always available  
to the user, regardless of the state of this control cell.  
The GAL18V10 device includes circuitry that allows each registered  
output to be synchronously set either high or low. Thus, any present  
state condition can be forced for test sequencing. If necessary,  
approved GAL programmers capable of executing test vectors  
perform output register preload automatically.  
Input Buffers  
Latch-Up Protection  
GAL18V10 devices are designed with TTL level compatible input  
buffers. These buffers have a characteristically high impedance,  
and present a much lighter load to the driving logic than bipolar TTL  
devices.  
GAL18V10 devices are designed with an on-board charge pump  
to negatively bias the substrate. The negative bias is of sufficient  
magnitude to prevent input undershoots from causing the circuitry  
to latch. Additionally, outputs are designed with n-channel pullups  
instead of the traditional p-channel pullups to eliminate any pos-  
sibility of SCR induced latching.  
The input and I/O pins also have built-in active pull-ups. As a result,  
floating inputs will float to a TTL high (logic 1). However, Lattice  
Semiconductor recommends that all unused inputs and tri-stated  
I/O pins be connected to an adjacent active input, Vcc, or ground.  
Doing so will tend to improve noise immunity and reduce Icc for the  
device.  
Device Programming  
GAL devices are programmed using a Lattice Semiconductor-  
approved Logic Programmer, available from a number of manu-  
facturers (see the the GAL Development Tools section). Complete  
programming of the device takes only a few seconds. Erasing of  
the device is transparent to the user, and is done automatically as  
part of the programming cycle.  
Typical Input Current  
0
- 2 0  
- 4 0  
- 6 0  
0
1 . 0  
2 . 0  
3 . 0  
4 . 0  
5 . 0  
Input Voltage (Volts)  
12