DC and Switching Characteristics
LatticeECP2/M Family Data Sheet
Lattice Semiconductor
DC Electrical Characteristics
Over Recommended Operating Conditions
Symbol
Parameter
Condition
- 0.2V)
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
8
Max.
10
Units
µA
µA
µA
µA
µA
µA
µA
µA
V
1
I , I
Input or I/O Low Leakage
Input or I/O High Leakage
I/O Active Pull-up Current
I/O Active Pull-down Current
0 ≤ V ≤ (V
IN CCIO
IL IH
1
I
I
I
I
I
I
I
(V
- 0.2V) < V ≤ 3.6V
—
150
-210
210
—
IH
CCIO
IN
CCIO
0 ≤ V ≤ 0.7 V
-30
30
PU
IN
V
(MAX) ≤ V ≤ V (MAX)
IN IH
PD
IL
Bus Hold Low Sustaining Current V = V (MAX)
30
BHLS
BHHS
BHLO
BHHO
IN
IL
Bus Hold High Sustaining Current V = 0.7 V
-30
—
—
IN
CCIO
CCIO
CCIO
Bus Hold Low Overdrive Current 0 ≤ V ≤ V
210
-210
IN
Bus Hold High Overdrive Current 0 ≤ V ≤ V
—
IN
V
Bus Hold Trip Points
I/O Capacitance2
0 ≤ V ≤ V (MAX)
V
(MAX)
—
V
(MIN)
BHT
IN
IH
IL
IH
V
V
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
—
—
pf
CCIO
CC
C1
C2
= 1.2V, V = 0 to V (MAX)
IO
IH
V
V
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
—
6
pf
Dedicated Input Capacitance2
CCIO
CC
= 1.2V, V = 0 to V (MAX)
IO
IH
1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured
with the output driver active. Bus maintenance circuits are disabled.
2. T 25oC, f = 1.0MHz.
A
3-3
LATTICE [ LATTICE SEMICONDUCTOR ]
