29 | Keysight | B1505A Power Device Analyzer/Curve Tracer - Data Sheet
Gate charge measurement specifications
The B1505A can perform gate charge characterization for Nch MOSFETs and IGBTs. Both packaged devices and on-wafer
devices are supported. The following table shows the available solutions and their required accessories (which depend on device
type and current level). Temperature dependent measurements using a Thermostream or the Thermal plate are not supported.
Vgs(V)
Qg
Vgs
Qg: Gate charge
Qgs: Gate-source charge
Vgs
pleteau
Qgs1: Gate charge at threshold
Qgs2: Gate charge from threshold to onset of plateau
Qgd: Gate-drain charge
Vth
Qgs1 Qgs2
Qgs
Qgate(C)
Qgd
Hardware configuration and measurement/setting parameters
Package solution
On-wafer solution
High voltage module
Max voltage range
High current module
B1513B/C HVSMU
3000 V
B1512A HCSMU N1265A-500 N1265A-1500A B1512A HC-
SMU
N1265A-500A N1265A-1500A
Max current range
Gate control module
Ireg control module
Fixture/selector
Adapter/selector
Qg
20 A
500 A
1500 A
B1514A MCSMU
B1514A MCSMU
N1258A
N1274A
1 nC to 100 µC
20 A
500 A
1500 A
N1259A
N1265A
N1265A
N1275A
N1259AU-014
N1265AU-014
Min resolution
10 pC
Vds (vce) @high
voltage
0 V to +3000 V
Voltage/sampling resolu-
tion
3 mV / 6 us
Vds(vce) @ high
current
Not Support
20 A1
-60 V to 60 V
Not Support
-60 V to 60 V
Voltage /sampling resolu-
tion
100 µV / 2 µs
100 µV / 2 µs
Id (ic) maximum rated
current
350 A1
500 A1,2
20 A1
350 A1
500 A1,2
Current/sampling resolution
Vgs (vge)
2 mA / 2 µs
-30 V to +30 V
40 µV / 2 µs
10 nA to 1 A
10 pA / 2 µs
Voltage/sampling resolution
Ig
Current/sampling resolution
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