IRFB16N50K, SiHFB16N50K
100000
100.00
10.00
1.00
V
= 0V,
f = 1 MHZ
GS
C
C
C
= C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
10000
1000
100
10
= C + C
ds
gd
T
= 150°C
J
C
iss
C
oss
T
= 25°C
J
C
rss
V
= 0V
GS
1
0.10
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
12.0
I
= 17A
D
OPERATION IN THIS AREA
LIMITED BY R (on)
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
DS
100
10
1
100µsec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1000
0.1
1
10
100
10000
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
Fig. 8 - Maximum Safe Operating Area
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
4
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