IRFB16N50K, SiHFB16N50K
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
-
0.50
-
RthCS
-
°C/W
RthJC
0.44
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
-
V
V/°C
V
-
0.58
3.0
-
5.0
100
50
VGS
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 Ab
=
30 V
-
-
nA
-
-
-
Zero Gate Voltage Drain Current
IDSS
µA
-
0.285
-
250
0.350
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = 50 V, ID = 10 A
5.7
S
Input Capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
2210
240
26
-
-
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
-
pF
V
DS = 1.0 V, f = 1.0 MHz
2620
63
-
Output Capacitance
Coss
VGS = 0 V
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
-
Effective Output Capacitance
Total Gate Charge
C
oss eff.
Qg
120
60
-
89
27
43
-
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VGS = 10 V
ID = 17 A, VDS = 400 Vb
18
nC
ns
28
Turn-On Delay Time
Rise Time
20
77
-
V
DD = 250 V, ID = 17 A,
Turn-Off Delay Time
Fall Time
td(off)
tf
RG = 8.8 Ω, VGS = 10 Vb
38
-
30
-
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
-
-
-
-
17
68
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 17 A, VGS = 0 Vb
-
-
-
-
1.5
730
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
490
5710
ns
nC
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
Qrr
ton
8560
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
.
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