IRFB16N50K, SiHFB16N50K
100000
10000
Coss = C ds + C gd
ISD, Reverse Drain Current (A)
V
GS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
100.00
C, Capacitance(pF)
Ciss
1000
T J = 150°C
10.00
Coss
100
T J = 25°C
1.00
Crss
10
V
GS = 0V
1
1
10
100
1000
0.10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
DS, Drain-to-Source
Voltage
(V)
V
SD, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12.0
ID= 17A
V
GS, Gate-to-Source
Voltage
(V)
1000
V
DS= 400V
V
DS= 250V
V
DS= 100V
OPERATION IN THIS AREA
LIMITED BY R DS(on)
8.0
ID, Drain-to-Source Current (A)
10.0
100
6.0
10
100µsec
1msec
4.0
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
10msec
1000
10000
2.0
0.0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
4
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