IRFB16N50K, SiHFB16N50K
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
89
27
43
Single
D
FEATURES
500
0.285
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low R
DS(on)
• Lead (Pb)-free Available
TO-220
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
G
D
S
N-Channel
MOSFET
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB16N50KPbF
SiHFB16N50K-E3
IRFB16N50K
SiHFB16N50K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
500
± 30
17
11
68
2.3
310
17
28
280
11
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 2.2 mH, R
G
= 25
Ω,
I
AS
= 17 A.
c. I
SD
≤
17 A, dI/dt
≤
500 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
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1
KERSEMI [ Kersemi Electronic Co., Ltd. ]
