IRFB16N50K, SiHFB16N50K
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
TOP
100
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current
(Α
)
T J = 150°C
10
BOTTOM
10
1
5.5V
T J = 25°C
V
DS = 100V
60µs PULSE
WIDTH
1.0
4
5
6
7
8
9 10 11 12 13 14 15 16
0.1
0.1
1
60µs PULSE
WIDTH
Tj = 25°C
10
100
V
DS, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS, Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TOP
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
3.0
ID, Drain-to-Source Current (A)
2.5
ID = 17A
V
GS = 10V
10
BOTTOM
2.0
5.5V
1.5
1
1.0
0.5
60µs PULSE
WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V
DS, Drain-to-Source
Voltage
(V)
0.0
-60 -40 -20
0
20
40
60
80
100 120 140 160
T J , Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
