101
101
V
Top :
15GVS
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
ꢀ
150
100
ꢀ
25
ꢀ
-55
ꢀ
Notes :
ꢀ
-1
10
Notes :
ꢁ
1. VDS = 50V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TC = 25
ꢁ
ꢂ
-1
10
-1
10
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1
10
6
5
4
3
2
1
0
VGS = 10V
VGS = 20V
0
10
ꢀ
150
ꢀ
25
ꢀ
Notes :
1. VGS = 0V
ꢁ
2. 250 s Pulse Test
ꢀ
ꢂ
Note : T = 25
J
-1
10
0
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
12
Ciss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + C
gd
C
rss = C
VDS = 120V
VDS = 300V
VDS = 480V
gd
10
8
800
600
400
200
0
C
iss
C
oss
6
4
ꢀ
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
ꢀ
Note : ID = 4.4 A
0
0
3
6
9
12
15
-1
0
10
1
10
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
KERSEMI [ Kersemi Electronic Co., Ltd. ]
