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FQPF4N60 参数 Datasheet PDF下载

FQPF4N60图片预览
型号: FQPF4N60
PDF下载: 下载PDF文件 查看货源
内容描述: 600V N沟道MOSFET [600V N-Channel MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 7 页 / 726 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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ꢀꢀꢀꢀꢀ  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BV  
V
I
= 0 V, I = 250 µA  
Drain-Source Breakdown Voltage  
600  
--  
--  
--  
--  
V
DSS  
GS  
D
BV  
Breakdown Voltage Temperature  
Coefficient  
DSS  
J
= 250 µA, Referenced to 25°C  
0.6  
V/°C  
D
/
I
T  
V
V
V
V
= 600 V, V = 0 V  
--  
--  
--  
--  
--  
--  
--  
--  
10  
100  
100  
-100  
µA  
µA  
nA  
nA  
DSS  
DS  
GS  
Zero Gate Voltage Drain Current  
= 480 V, T = 125°C  
DS  
GS  
GS  
C
I
I
= 30 V, V = 0 V  
Gate-Body Leakage Current, Forward  
Gate-Body Leakage Current, Reverse  
GSSF  
DS  
= -30 V, V = 0 V  
GSSR  
DS  
On Characteristics  
V
V
V
V
= V , I = 250 µA  
Gate Threshold Voltage  
3.0  
--  
--  
5.0  
2.2  
--  
V
S
GS(th)  
DS  
GS  
DS  
GS  
D
R
Static Drain-Source  
On-Resistance  
DS(on)  
= 10 V, I = 1.3 A  
1.77  
3.1  
D
g
= 50 V, I = 1.3 A  
(Note 4)  
Forward Transconductance  
--  
FS  
D
Dynamic Characteristics  
C
C
C
Input Capacitance  
--  
--  
--  
520  
70  
8
670  
90  
pF  
pF  
pF  
iss  
V
= 25 V, V = 0 V,  
GS  
DS  
Output Capacitance  
oss  
rss  
f = 1.0 MHz  
Reverse Transfer Capacitance  
11  
Switching Characteristics  
t
t
t
t
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
--  
--  
--  
--  
--  
--  
--  
13  
45  
25  
35  
15  
3.4  
7.1  
35  
100  
60  
80  
20  
--  
ns  
ns  
d(on)  
V
= 300 V, I = 4.4 A,  
DD  
D
r
R
= 25 Ω  
G
ns  
d(off)  
f
(Note 4, 5)  
(Note 4, 5)  
ns  
Q
Q
Q
nC  
nC  
nC  
g
V
V
= 480 V, I = 4.4 A,  
DS  
D
= 10 V  
gs  
gd  
GS  
--  
Drain-Source Diode Characteristics and Maximum Ratings  
I
Maximum Continuous Drain-Source Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
2.6  
10.4  
1.4  
--  
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current  
SM  
V
t
V
V
= 0 V, I = 2.6 A  
Drain-Source Diode Forward Voltage  
Reverse Recovery Time  
--  
V
SD  
GS  
S
= 0 V, I = 4.4 A,  
250  
1.5  
ns  
µC  
rr  
GS  
S
(Note 4)  
dI / dt = 100 A/µs  
Q
Reverse Recovery Charge  
--  
F
rr  
Notes:  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L = 71mH, I = 2.6A, V = 50V, R = 25 Ω, Starting T = 25°C  
AS  
DD  
G
J
3. I 4.4A, di/dt 200A/µs, V BV  
Starting T = 25°C  
4. Pulse Test : Pulse width 300µs, Duty cycle 2%  
SD  
DD  
DSS, J  
5. Essentially independent of operating temperature