R
JCS12N60T
电特性 ELECTRICAL CHARACTERISTICS
项
目
符 号
测试条件
最小 典型 最大 单位
Parameter
关态特性 Off –Characteristics
漏-源击穿电压
Symbol
Tests conditions
Min Typ Max Units
BVDSS
ID=250μA, VGS=0V
600
-
-
-
-
V
Drain-Source Voltage
击穿电压温度特性
ΔBVDSS/Δ ID=250μA, referenced to
Breakdown Voltage Temperature
Coefficient
0.5
V/℃
TJ
25℃
VDS=600V,VGS=0V,
零栅压下漏极漏电流
-
-
-
-
1
μA
μA
TC=25℃
IDSS
Zero Gate Voltage Drain Current
VDS=480V,
TC=125℃
10
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=0V, VGS =30V
-
-
-
-
100 nA
-100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
通态特性On-Characteristics
阈值电压
V
Ω
S
5.0
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250μA
VGS =10V , ID=6A
3.0
-
Gate Threshold Voltage
静态导通电阻
Static Drain-Source
On-Resistance
-
-
0.56 0.65
正向跨导
VDS = 40V, ID=6A(note 4)
13
-
Forward Transconductance
动态特性Dynamic Characteristics
输入电容
VDS=25V,
VGS =0V,
f=1.0MHZ
Ciss
Coss
Crss
-
-
-
1790 2410 pF
175 229 pF
Input capacitance
输出电容
Output capacitance
反向传输电容
23
31
PF
Reverse transfer capacitance
版本:201010C
3/10