IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
120
105
90
75
60
45
30
15
0
40
36
32
28
24
20
16
12
8
T = -40ºC
J
25ºC
125ºC
T = 125ºC
J
25ºC
-40ºC
4
0
5
0.5
0
6
7
8
9
10
11
1.7
40
0
0
1
20
40
60
80 100 120 140 160 180
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
200
180
160
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
V
DS
= 50V
I
I
= 37.5A
= 10mA
D
G
60
T = 125ºC
J
40
T = 25ºC
J
20
0
0.7
0.9
1.1
1.3
1.5
10
20
30
40
50
60
70
80
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
f = 1MHz
T = 150ºC
J
R
Limit
DS(on)
T
C
= 25ºC
C
iss
25µs
100µs
C
oss
1ms
10ms
DC
C
rss
1
5
10
15
20
25
30
35
10
100
1000
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
ofthefollowingU.S.patents:
4,835,592
4,881,106
5,017,508
5,049,961
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXYS [ IXYS CORPORATION ]
