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IXTP75N10P 参数 Datasheet PDF下载

IXTP75N10P图片预览
型号: IXTP75N10P
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强模式 [N-Channel Enhancement Mode]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 5 页 / 582 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXTP75N10P的Datasheet PDF文件第1页浏览型号IXTP75N10P的Datasheet PDF文件第3页浏览型号IXTP75N10P的Datasheet PDF文件第4页浏览型号IXTP75N10P的Datasheet PDF文件第5页  
IXTA 75N10P IXTP 75N10P  
IXTQ 75N10P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
20  
28  
S
Ciss  
Coss  
Crss  
2250  
890  
pF  
pF  
pF  
275  
td(on)  
tr  
td(off)  
tf  
27  
53  
66  
45  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 10 (External)  
Qg(on)  
Qgs  
74  
18  
40  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCK  
0.42 K/W  
(TO-3P)  
(TO-220)  
0.21  
0.25  
K/W  
K/W  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
75  
A
A
V
ISM  
Repetitive  
200  
1.5  
TO-220 (IXTA) Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 75 V  
120  
1.4  
ns  
QRM  
µC  
TO-263 (IXTP) Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
Pins: 1 - Gate  
2 - Drain  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
4,850,072  
4,931,844  
5,034,796  
5,063,307  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
ofthefollowingU.S.patents:  
4,835,592  
4,881,106  
5,017,508  
5,049,961  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344