IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
Symbol
gfs
TestConditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
20
28
S
Ciss
Coss
Crss
2250
890
pF
pF
pF
275
td(on)
tr
td(off)
tf
27
53
66
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 10 Ω (External)
Qg(on)
Qgs
74
18
40
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.42 K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
75
A
A
V
ISM
Repetitive
200
1.5
TO-220 (IXTA) Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 75 V
120
1.4
ns
QRM
µC
TO-263 (IXTP) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
Pins: 1 - Gate
2 - Drain
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
ofthefollowingU.S.patents:
4,835,592
4,881,106
5,017,508
5,049,961
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344