Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 75N10P
IXTA 75N10P
IXTP 75N10P
VDSS = 100 V
ID25 = 75 A
RDS(on) = 25 mΩ
N-Channel Enhancement Mode
TO-3P(IXTQ)
Symbol
TestConditions
Maximum Ratings
G
VDSS
VDGR
T
= 25°C to 175°C
100
100
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ
D
(TAB)
S
VGSM
20
V
TO-220 (IXTP)
ID25
IDM
T
= 25°C
75
A
A
TCC = 25°C, pulse width limited by TJM
TC = 25°C
200
IAR
50
A
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
G
D
S
1.0
TO-263 (IXTA)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
TC = 25°C
300
W
G
S
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
(TAB)
G = Gate
D = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
300
260
°C
°C
S = Source
TAB = Drain
Features
Md
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Weight
TO-3P
TO-220
TO-263
5.5
4
3
g
g
g
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Advantages
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
100
V
V
z
Easy to mount
Space savings
2.5
5.0
z
z
High power density
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
21
25 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99158(03/04)
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IXYS [ IXYS CORPORATION ]
