IXSN52N60AU1
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
1000
750
500
250
0
12
9
1000
800
600
400
200
0
10
TJ = 125°C
C = 52A
TJ = 125°C
I
Eoff
RG = 10
8
6
4
2
0
Eoff
6
tfi
tfi
3
0
0
10 20 30 40 50 60 70 80
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
15
12
9
1000
100
10
I
C = 52A
V
CE = 480V
TJ = 125°C
RG = 2.7
dV/dt < 6V/ns
6
1
3
0.1
0.01
0
0
100 200 300 400 500 600 700
VCE - Volts
0
50
100
150
200
250
Qg - nCoulombs
Fig.11 Transient Thermal Impedance
1
0.1
Diode
IGBT
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
Time - Seconds
0.1
1
10
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