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IXSN52N60AU1 参数 Datasheet PDF下载

IXSN52N60AU1图片预览
型号: IXSN52N60AU1
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT与二极管Combi机包 - 短路SOA能力 [IGBT with Diode Combi Pack - Short Circuit SOA Capability]
分类和应用: 二极管双极性晶体管
文件页数/大小: 5 页 / 150 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXSN52N60AU1的Datasheet PDF文件第1页浏览型号IXSN52N60AU1的Datasheet PDF文件第3页浏览型号IXSN52N60AU1的Datasheet PDF文件第4页浏览型号IXSN52N60AU1的Datasheet PDF文件第5页  
IXSN52N60AU1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
IC = IC90; VCE = 10 V,  
20  
23  
S
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Cies  
Coes  
Cres  
4500  
400  
90  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
190  
45  
250 nC  
60 nC  
M4 screws (4x) supplied  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Max.  
88  
120 nC  
A
B
7.80  
8.20 0.307 0.323  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
70  
220  
200  
200  
3.5  
ns  
ns  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
IC = IC90, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = 2.7 W  
E
F
4.09  
4.29 0.161 0.169  
14.91 15.11 0.587 0.595  
ns  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
J
11.68 12.22 0.460 0.481  
K
8.92  
9.60 0.351 0.378  
Eoff  
mJ  
L
0.76  
0.84 0.030 0.033  
M
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
td(on)  
tri  
70  
220  
4.7  
450  
340  
6
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = 2.7 W  
N
O
1.98  
2.13 0.078 0.084  
P
Q
4.95  
5.97 0.195 0.235  
26.54 26.90 1.045 1.059  
Eon  
td(off)  
tfi  
mJ  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
ns  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
600 ns  
mJ  
Eoff  
RthJC  
RthCK  
0.50 K/W  
K/W  
0.05  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.8  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms  
VR = 360 V  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C  
19  
175  
35  
A
ns  
50 ns  
TJ = 125°C  
RthJC  
0.80 K/W  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025