Advanced Technical Information
IXKP 10N60C5M
40
1.6
6V
6.5 V
7V
1.2
V
DS
=
5V
5.5 V
I
D
= 5.2 A
V
GS
= 10 V
1
V
DS
> 2·R
DS(on) max
· I
D
36
32
28
25 °C
1.2
T
JV
= 150°C
20 V
0.8
[Ω]
[Ω]
24
0.6
98 %
DS (on)
0.8
DS (on)
I
D
[A ]
20
16
150 °C
R
R
T
J
=
0.4
typ
12
0.4
0.2
8
4
0
0
5
10
15
20
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
I
D
[A]
T
j
[°C]
V
GS
[V]
Fig. 3 Typ. drain-source on-state
resistance characteristics of IGBT
10
2
Fig. 4 Drain-source on-state resistance
Fig. 5 Typ. transfer characteristics
10
10
5
I
D
= 5.2 A pulsed
9
8
10
4
V
GS
= 0 V
f = 1 MHz
10
1
T
J
=
150 °C
25 °C
150 °C, 98%
V
DS
=
120 V
7
6
400 V
10
3
Ciss
[V ]
V
GS
5
4
C [pF ]
10
2
I
F
[A ]
10
0
Coss
25 °C, 98%
3
2
1
10
1
Crss
10
-1
0
0
0.5
1
1.5
2
10
0
0
5
10
15
20
0
50
100
150
200
V
SD
[V]
Q
gate
[nC]
V
DS
[V]
Fig. 6 Forward characteristic
of reverse diode
250
Fig. 7
Typ. gate charge
Fig. 8 Typ. capacitances
700
I
D
= 3.4 A
I
D
= 0.25 mA
200
660
[m J ]
B R (DS S )
[V ]
620
150
E
AS
100
V
580
540
20
60
100
140
180
50
0
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Fig. 9 Avalanche energy
Fig. 10 Drain-source breakdown voltage
0649
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4-4
IXYS [ IXYS CORPORATION ]
