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10N60C5M 参数 Datasheet PDF下载

10N60C5M图片预览
型号: 10N60C5M
PDF下载: 下载PDF文件 查看货源
内容描述: 的CoolMOS功率MOSFET [CoolMOS Power MOSFET]
分类和应用:
文件页数/大小: 4 页 / 104 K
品牌: IXYS [ IXYS CORPORATION ]
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Advanced Technical Information
IXKP 10N60C5M
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
I
S
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0 V
I
F
= 5.2 A; V
GS
= 0 V
I
F
= 5.2 A; -di
F
/dt = 100 A/µs; V
R
= 400 V
0.9
260
21
24
typ.
max.
5.2
1.2
A
V
ns
µC
A
Component
Symbol
T
VJ
T
stg
M
d
Symbol
Conditions
operating
mounting torque
Conditions
Maximum Ratings
-40...+150
-40...+150
0.4 ... 0.6
°C
°C
Nm
Characteristic Values
min.
typ.
0.50
80
2
max.
K/W
K/W
g
R
thCH
R
thJA
Weight
with heatsink compound
thermal resistance junction - ambient
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-4
0649