Advanced Technical Information
IXKP 10N60C5M
I
D25
= 5.4 A
V
DSS
= 600 V
R
DS(on) max
= 0.385
Ω
CoolMOS Power MOSFET
Fully isolated package
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
Ultra low gate charge
G
D
TO-220 ABFP
G
D
S
S
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
E
AS
E
AR
dV/dt
Symbol
T
C
= 25°C
T
C
= 90°C
single pulse
repetitive
I
D
= 3.4 A; T
C
= 25°C
Conditions
T
VJ
= 25°C
Maximum Ratings
600
±
20
5.4
3.7
225
0.3
50
V
V
A
A
mJ
mJ
V/ns
Features
• Fast CoolMOS power MOSFET - 4th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
• Fully isolated package
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
CoolMOS is a trademark of
Infineon Technologies AG.
MOSFET dV/dt ruggedness V
DS
= 0...480 V
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
350
2.5
T
VJ
= 25°C
T
VJ
= 125°C
3
tbd
100
790
38
17
4
6
tbd
tbd
tbd
tbd
3.95
22
max.
385
3.5
1
mΩ
V
µA
µA
nA
pF
pF
nC
nC
nC
ns
ns
ns
ns
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
V
GS
= 10 V; I
D
= 5.2 A
V
DS
= V
GS
; I
D
= 0.34 mA
V
DS
= 600 V; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 5.2 A
V
GS
= 10 V; V
DS
= 400 V
I
D
= 5.2 A; R
G
= 4.3
Ω
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0649
IXYS [ IXYS CORPORATION ]
