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IS62WV5128BLL-55H 参数 Datasheet PDF下载

IS62WV5128BLL-55H图片预览
型号: IS62WV5128BLL-55H
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8低电压,超低功耗CMOS静态RAM [512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 14 页 / 85 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS62WV5128ALL, IS62WV5128BLL  
ISSI  
OPERATING RANGE (VDD)  
Range  
AmbientTemperature  
0°C to +70°C  
IS62WV5128ALL  
1.65V - 2.2V  
IS62WV5128BLL  
2.5V - 3.6V  
Commercial  
Industrial  
–40°Cto+85°C  
1.65V - 2.2V  
2.5V - 3.6V  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol  
VTERM  
VDD  
Parameter  
Value  
–0.2 to VDD+0.3  
–0.2 to VDD+0.3  
–65 to +150  
1.0  
Unit  
Terminal Voltage with Respect to GND  
VDD Related to GND  
V
V
TSTG  
PT  
StorageTemperature  
°C  
W
PowerDissipation  
Note:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the  
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods  
may affect reliability.  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
TestConditions  
VDD  
Min.  
Max.  
Unit  
VOH  
VOL  
VIH  
OutputHIGHVoltage  
IOH = -0.1 mA  
IOH = -1 mA  
1.65-2.2V  
2.5-3.6V  
1.4  
2.2  
V
V
OutputLOWVoltage  
Input HIGH Voltage  
Input LOW Voltage  
IOL = 0.1 mA  
IOL = 2.1 mA  
1.65-2.2V  
2.5-3.6V  
0.2  
0.4  
V
V
1.65-2.2V  
2.5-3.6V  
1.4  
2.2  
VDD + 0.2  
VDD + 0.3  
V
V
(1)  
VIL  
1.65-2.2V  
2.5-3.6V  
–0.2  
–0.2  
0.4  
0.6  
V
V
ILI  
InputLeakage  
GND VIN VDD  
–1  
–1  
1
1
µA  
µA  
ILO  
OutputLeakage  
GND VOUT VDD, Outputs Disabled  
Notes:  
1. VIL (min.) = –1.0V for pulse width less than 10 ns.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. A  
3
04/30/03