®
IS62WV5128ALL
IS62WV5128BLL
ISSI
512K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
APRIL2003
FEATURES
DESCRIPTION
The ISSI IS62WV5128ALL / IS62WV5128BLL are high-
speed, 4M bit static RAMs organized as 512K words by 8
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
• High-speed access time: 55ns, 70ns
• CMOS low power operation
36 mW (typical) operating
9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
When CS1 is HIGH (deselected) the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
1.65V – 2.2V VDD (IS62WV5128ALL)
2.5V – 3.6V VDD (IS62WV5128BLL)
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
• Fully static operation: no clock or refresh
required
TheIS62WV5128ALLandIS62WV5128BLLarepackaged
in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin
sTSOP (TYPE I), and 32-pin TSOP (Type II).
• Three state outputs
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
512K x 8
MEMORY ARRAY
A0-A18
DECODER
V
DD
GND
I/O
DATA
CIRCUIT
COLUMN I/O
I/O0-I/O7
CS1
OE
CONTROL
CIRCUIT
WE
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
1
04/30/03
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
